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| 2SC2412 Elektronische Bauelemente NPN Silicon General Purpose Transistor A suffix of "-C" specifies halogen & lead-free FEATURES n A L SOT-23 Dim Min 2.800 1.200 0.890 0.370 1.780 0.013 0.085 0.450 0.890 2.100 0.450 Max 3.040 1.400 1.110 0.500 2.040 0.100 0.177 0.600 1.020 2.500 0.600 A B C D C Low Cob. Cob=2.0pF Compements the 2SA1037K RoHS Compliant Product 1 3 n n Top View 2 BS n V G STRUCTURE n G H K J n Expitaxial planar type NPN Silicon Teansistor D H J K L Collector Base Emitter S V All Dimension in mm !Absolute maximum (Ta=25C) Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Symbol VCBO VCEO VEBO IC Limits 60 50 7 0.15 Unit V V V A Collector power dissipation PC 0.2 W C C Junction temperature Storage temperature Tj Tstg 150 -55~+150 !Electrical characteristics (Ta=25C) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current DC current transfer ratio Collector-emitter saturation voltage Transition frequency Symbol BVCBO BVCEO BVEBO ICBO IEBO hFE VCE(sat) fT Cob Min. 60 50 7 - - 120 - - - Typ. - - - - - - - 180 2 Max. - - - 0.1 0.1 560 0.4 - 3.5 Unit V V V A A - V MHz pF IC=50A IC=1mA IE=50A VCB=60V VEB=7V Conditions VCE=6V, IC=1mA IC/IB=50mA/5mA VCE=12V, IE=-2mA, f=100MHz VCE=12V, IE=0A, f=1MHz Output capacitance hFE values are classified as follows : Item hFE Marking Q 120~270 BQ R 180~390 BR S 270~560 BS http://www.SeCoSGmbH.com Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 1 of 3 2SC2412 Elektronische Bauelemente NPN Silicon General Purpose Transistor Typical Characteristics http://www.SeCoSGmbH.com Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 2 of 3 2SC2412 Elektronische Bauelemente NPN Silicon General Purpose Transistor http://www.SeCoSGmbH.com Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 3 of 3 |
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